Effect of GaP Epitaxy Morphology on Brightness Performance of AlGaInP LED
碩士 === 國立成功大學 === 電機工程學系專班 === 95 === In LED structure, if there is no GaP window layer, the Vf is high and the luminous intensity is lower. So we usually epis the GaP window layer under the P-type as the current spreading layer. The LED has the low Vf and high luminous intensity in the GaP window l...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18201289255266516501 |