Investigation of Electrical Characteristics of KF Low-k Dielectric Material
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 95 === In this thesis, interaction between copper electrode and low dielectric constant KF ( Carbon-Doped silicon Oxide, CDO ) film was demonstrated. The Metal-Insulation-Semiconductor (MIS) capacitors were fabricated with a copper electrode. The breakdown electrical...
Main Authors: | Hua-Shan Lee, 李華山 |
---|---|
Other Authors: | Yan-Kuin Su |
Format: | Others |
Language: | en_US |
Published: |
2007
|
Online Access: | http://ndltd.ncl.edu.tw/handle/25682379196474455954 |
Similar Items
-
Electrical studies of silicon and low K dielectric material
by: Ahn, Sang Hoon, 1970-
Published: (2005) -
Comprehensively Investigate Electrical, Physical and Reliability Characteristics of Low-k Dielectrics under Oxygen Plasma Treatment
by: Ping Hung Lin, et al.
Published: (2013) -
Strong magnetic field enhancement of spin triplet pairing arising from coexisting 2k_F spin and 2k_F charge fluctuations
by: Aizawa, Hirohito, et al.
Published: (2008) -
Optical and Electrical Propterties of High-k Dielectric Materials
by: Tze-Chiang Chen, et al. -
The Investigations of Electrical Characteristic on nMOSFETs with High-k Dielectrics in Nano Technology
by: Hou-Jhih Huang, et al.
Published: (2008)