The study and fabrication of vertical-structured AlGaInP high power light-emitting diodes with metallic reflecting substrate
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Recently, the light output power of light-emitting duodes (LEDs) was enhanced due to the rapid development of epitaxy technique. As a result, a high internal quantum efficiency of around 90% has been achieved for AlGaInP LEDs. However, the absorbing and poor...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/12473965024510143575 |