Long Wavelength GaAsSb Quantum Well Lasers on GaAs Substrates Grown by MOVPE

• Main Authors: Yi-Sin Wang, 王義欣
• Other Authors: Yan-Kuin Su
• Format: Others
• Language: en_US
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/36783886165810623768

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Whereas the demand of internet bandwidth increasing day by day, it is a inevitable trend to develop fiber communication. In optical fiber communication, the wavelength regions of 1310nm and 1550nm have advantages of zero dispersion and lowest loss respectively. They are the most suitable transmission wavelength regions of long haul fiber communication. The long wavelength lasers can be achieved by growing InGaAsP on InP substrates traditionally. Not only it is very expensive but also the temperature characteristics are not good enough. In this thesis, we try to grow GaAsSb QW lasers on GaAs by MOVPE to replace InP based long wavelength lasers. The layer thickness and Sb composition of GaAsSb bulk samples were analyzed by HRXRD. After understanding the effects of epitaxy parameters to GaAsSb composition and lattice quality generally, a further step to grow GaAsSb/GaAs MQW and the optical properties by using photoluminescence were proceeded and analyzed. Then GaAsSb/GaAs edge emitting lasers were fabricated, GaAsSb/GaAs edge emitting lasers are demonstrated successfully. The longest lasing wavelength we achieved is 1203nm. To our knowledge, it’s the longest lasing wavelength of GaAsSb/GaAs edge emitting lasers grown by MOVPE. In the future, we will continue to grow GaAsSb/GaAs QW lasers near 1300nm. On the other hand, we will also go on to investigate GaAsSb/InGaAs bi-layer QW lasers for longer wavelength.