Investigation of Strained-Si NMOSFETs on SiGe Virtual Substrate with Chemical-Mechanical-Polishing Technique
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === In this thesis, the strained-Si NMOSFETs structures are fabricated on the SiGe virtual substrate. Introduction of tensile strained-Si layer into Si-based structures is attributed to the fact that electron mobility can be enhanced due to energy band splitti...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57646564998412038992 |