Study and Development of Oxygen-doped Silicon Carbide Dielectric Barrier for Nano Integrated Circuit Integration
博士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 95 === In this thesis, we studied and developed the novel dielectric barrier used for nano integrated circuit. Oxygen-doped silicon carbide (SiCO) was deposited on silicon substrate by plasma enhanced chemical vapor deposition(PECVD). The properties of interface,...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/04983709309845062097 |