Fabrications of ohmic contacts and properties of low-frequency noise of AlN nanowires
碩士 === 中興大學 === 物理學系所 === 95 === We report the fabrication and the electrical properties of ohmic contacts for AlN nanowires (NWs) devices. Although AlN possesses superior properties in many aspects, its high energy gap makes it difficult to fabricate ohmic contacts. Prior to this study, comparative...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58341046720089852365 |
| Summary: | 碩士 === 中興大學 === 物理學系所 === 95 === We report the fabrication and the electrical properties of ohmic contacts for AlN nanowires (NWs) devices. Although AlN possesses superior properties in many aspects, its high energy gap makes it difficult to fabricate ohmic contacts. Prior to this study, comparatively little experiments were conducted about the ohmic contacts and electrical properties of AlN NWs.
The electrodes of the AlN NW devices were defined by e-beam lithography. Afterward the devices were annealed at 430°C. We have successfully fabricated ohmic contacts with Ti/Al and Al and investigated the behavior of 1/f noise and Lorentzian-like noise at room temperature.
From the Arrhenius plot of the time constant associated with the Lorentzian noise we can obtain the activation energy, Ea, to be 541meV in the temperature from 300K to 275K with different bias at 0.3 nA and 1.5 nA.
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