Using Cross-spectrum Technique to study the Low-frequency Noise of GaN Nanowire

碩士 === 中興大學 === 物理學系所 === 95 === We successfully fabricated multi-electrode devices on GaN nanowires (NWs) and extracted the low-frequency noise of GaN NWs by cross-spectrum technique. From results of cross-spectrum measurement, we found that the noise of GaN NWs is much smaller than contact noise...

Full description

Bibliographic Details
Main Authors:	Jia-An Wei, 魏迦安
Other Authors:	Yuen-Wu Suen
Format:	Others
Language:	zh-TW
Published:	2007
Online Access:	http://ndltd.ncl.edu.tw/handle/55086148097732451246

id	ndltd-TW-095NCHU5198022
record_format	oai_dc
spelling	ndltd-TW-095NCHU51980222015-10-13T14:13:10Z http://ndltd.ncl.edu.tw/handle/55086148097732451246 Using Cross-spectrum Technique to study the Low-frequency Noise of GaN Nanowire 利用相關頻譜量測技術探討氮化鎵奈米線低頻雜訊 Jia-An Wei 魏迦安碩士中興大學物理學系所 95 We successfully fabricated multi-electrode devices on GaN nanowires (NWs) and extracted the low-frequency noise of GaN NWs by cross-spectrum technique. From results of cross-spectrum measurement, we found that the noise of GaN NWs is much smaller than contact noise. It also indicates that the improvement of the ohmic contact can reduce the noise magnitude of GaN NWs devices. According to the temperature-dependence measurement, we can obtain the activation energy, Ea , from the Arrhenius plot of the characteristic time, τ, associated with the Lorentzian noise. Ea is around 270meV from 215K to 300K, and 320meV from 145K to 205K, respectively. Yuen-Wu Suen 孫允武 2007 學位論文 ; thesis 46 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 中興大學 === 物理學系所 === 95 === We successfully fabricated multi-electrode devices on GaN nanowires (NWs) and extracted the low-frequency noise of GaN NWs by cross-spectrum technique. From results of cross-spectrum measurement, we found that the noise of GaN NWs is much smaller than contact noise. It also indicates that the improvement of the ohmic contact can reduce the noise magnitude of GaN NWs devices. According to the temperature-dependence measurement, we can obtain the activation energy, Ea , from the Arrhenius plot of the characteristic time, τ, associated with the Lorentzian noise. Ea is around 270meV from 215K to 300K, and 320meV from 145K to 205K, respectively.
author2	Yuen-Wu Suen
author_facet	Yuen-Wu Suen Jia-An Wei 魏迦安
author	Jia-An Wei 魏迦安
spellingShingle	Jia-An Wei 魏迦安 Using Cross-spectrum Technique to study the Low-frequency Noise of GaN Nanowire
author_sort	Jia-An Wei
title	Using Cross-spectrum Technique to study the Low-frequency Noise of GaN Nanowire
title_short	Using Cross-spectrum Technique to study the Low-frequency Noise of GaN Nanowire
title_full	Using Cross-spectrum Technique to study the Low-frequency Noise of GaN Nanowire
title_fullStr	Using Cross-spectrum Technique to study the Low-frequency Noise of GaN Nanowire
title_full_unstemmed	Using Cross-spectrum Technique to study the Low-frequency Noise of GaN Nanowire
title_sort	using cross-spectrum technique to study the low-frequency noise of gan nanowire
publishDate	2007
url	http://ndltd.ncl.edu.tw/handle/55086148097732451246
work_keys_str_mv	AT jiaanwei usingcrossspectrumtechniquetostudythelowfrequencynoiseofgannanowire AT wèijiāān usingcrossspectrumtechniquetostudythelowfrequencynoiseofgannanowire AT jiaanwei lìyòngxiāngguānpínpǔliàngcèjìshùtàntǎodànhuàjiānàimǐxiàndīpínzáxùn AT wèijiāān lìyòngxiāngguānpínpǔliàngcèjìshùtàntǎodànhuàjiānàimǐxiàndīpínzáxùn
_version_	1717749745245487104

Using Cross-spectrum Technique to study the Low-frequency Noise of GaN Nanowire

Similar Items