| Summary: | 碩士 === 崑山科技大學 === 機械工程研究所 === 95 === The tribo-electrification mechanisms had been successfully applied to monitor the tribological properties between the metal films by our laboratory members. Moreover, the novel method of using continuous tribo-electrification variations for monitoring the tribological properties between the soft metal films is more “sensitive” and “discriminative” than that by the continuous friction coefficient variations as usual. However, the above novel method is only suitable for the conducted materials.
Therefore, this study is based on the above results to further develop another novel method for dynamic monitoring the tribological properties between the semiconductor or insulator films in the friction process. The experiment was conducted by the self-developed friction tester and its measure system. The dynamic electrical contact resistance, friction coefficient and vertical displacement were measured for monitoring the timings of film rupture or the oxide formations between the semiconductor or insulator films. Moreover, the wear loss was measured by an accuracy balance and the SEM was used to observe the structures of material transfer.
This paper can be discriminated the following three types: Firstly, a study of using continuous electrical contact resistance variations for monitoring the tribological properties of Ti/Ti and Ti/TiO2-film/Ti under different normal loads in dry friction process. Secondly, a study of using continuous electrical contact resistance variations for monitoring the tribological properties of Ti/Ti and Ti/TiO2-film/Ti under different sliding speeds in dry friction process. Thirdly, a study of using continuous electrical contact resistance variations for monitoring the tribological properties of Fe/DLC-film/Ti and Ti/ DLC-film/Ti under different normal loads in dry friction process. All of the above results can be applied to develop the film coating technology for the industry in the future.
|
|---|
