| Summary: | 碩士 === 崑山科技大學 === 電機工程研究所 === 95 === Transparent conducting oxide (TCO) thin films with special optical and electrical properties can use in many applications. The TCO can be classified with two types. One is n-type using electron transmission, its development was early and the technique is more mature; another is p-type using hole transmission, because it haven't got a low resistivity and still need to research. This thesis mainly studies p-type TCO. A sputtering method was used and a copper aluminum oxide was used as target. The process parameter were changed and expect to grow a crystallize structural of copper aluminum oxide thin films.
The experimental results showed that the structure are amorphous at room temperature measured by XRD and the optical transmittance was 40〜70％. Using chamber furnace to make heat treatment, the film can't from a crystallize structure of copper aluminum oxide thin films. The heating effect of long time causes miscellaneous patterns easily. When the sputtering power of copper oxide interlayer change to 10W, because of increasing the copper content inside the film, CuO and CuSiO3 peaks are found obviously in XRD analyses. Using rapid thermal annealing to make heat treatment, the method can obviously improve the thermal effect of furnace to avoid the miscellaneous problem due to heating too long. Temperature is set at 900℃ and 950℃ and with aluminum oxide interlayer, the crystallization of copper oxide is produced in part. The film can't get better adhesion, it is easy to strip with substrates.
Only at heating velocity of 20℃/sec, with aluminum oxidize interlayer, and 1050℃, the crystallize patterns of copper aluminum oxide (CuAlO2) is detected. But crystallize of copper aluminum oxide is local, and mixes with copper oxide crystallize. The films has a high resistance beyond 200MΩ, it can't be measured by Four-point method.
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