Photoluminescence of I-VII Semiconductor Compounds, ensitized Luminescence from “Deep States” Recombination in CuBr/AgBr Nanocrystals

碩士 === 高雄醫學大學 === 醫藥暨應用化學研究所碩士在職專班 === 95 === The photoluminescence (PL) properties of CuBr and CuBr/AgBr semiconductor nanocrystals (NCs) embedded in borosilicate glasses are measured under band-to-band excitation by a 355 nm Nd:YAG laser. We observed emission from CuBr (peaked at 520 nm) doped gla...

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Bibliographic Details
Main Authors: Yuan-Lung Hsia, 夏淵龍
Other Authors: Tsai-Chuan Wen
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/12472942856643999311
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Summary:碩士 === 高雄醫學大學 === 醫藥暨應用化學研究所碩士在職專班 === 95 === The photoluminescence (PL) properties of CuBr and CuBr/AgBr semiconductor nanocrystals (NCs) embedded in borosilicate glasses are measured under band-to-band excitation by a 355 nm Nd:YAG laser. We observed emission from CuBr (peaked at 520 nm) doped glass, which is associated with deep states in CuBr NCs. We also observed the sensitized blue to orange-red emission in CuBr/AgBr-glass systems (peaked at 520 and 570 nm), in which the luminescence intensity of CuBr decreases with increasing AgBr concentrations, while it is enhanced significantly around 570 nm. The results are discussed by the possible energy transfer between them, or by the multi-exitonic recombination process which ejects an excited carrier from CuBr to AgBr NCs.