| Summary: | 碩士 === 義守大學 === 材料科學與工程學系碩士班 === 95 === We have studied the Co-Pt-Cu alloy thin films deposited on the silicon substrates with a high vacuum D.C. sputtering system in this experiment. Systematic control on the experiment parameters, such as the composition of Co-Pt-Cu thin films, sputtering parameters, and vacuum annealing temperatures, was preformed to lower the ordering temperature of Co-Pt-Cu films.
From the XRD diffraction patterns and the magnetic measurement, the Cu component affected the preferred orientation of the Co-Pt-Cu film at different vacuum annealing temperature. And then the preferred orientation of the Co-Pt-Cu films influenced their magnetic properties. The ordering transformation of the thin films enhanced with increasing annealing temperature. The intensity of superlattice diffraction peak is highest after vacuum annealed at 600℃ for 30 min. In (CoPt)100-xCux alloy thin films, the sample shows a significant enhancement in superlattice (001) reflection with x=4.3 at%. The addition of Cu effectively promoted the order transformation at low temperatures.
(CoPt)100-xCux (x=4.3 at%) alloy thin films annealed at 600℃ for 30 min showed a hard magnetic behavior with Hc∥=7000 Oe and Hc⊥= 3850 Oe. However, the further addition level is detrimental to the ordering transformation of Co-Pt-Cu film.
From XRD diffraction patterns, the ordering temperature is reduced to 500℃. Detailed TEM observations showed the ordering transformation of the (CoPt)95.7Cu4.3 film might occur at RT. The differences rose from the low resolution of XRD technique. The results also hint the possibility to prepare L10 thin films by sputtering at RT.
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