| Summary: | 碩士 === 逢甲大學 === 材料科學所 === 95 === Chemical bath deposition (CBD) is a simple synthetic route to prepare II-VI semicondutive zinc sulfide thin films, which can be easily formed at any flat surface of glass or silicon wafer substrates in the solution containing the precursors of zinc and sulfur ions in terms of ambient conditions of different acidity. This study particularly aims at the growth dependence and optics property of ZnS thin films in the CBD process by different experiment parameters, wehereas we can choose suitable types of zinc ionic precursors by coupling with various CBD parameters including reaction temperature and time, precursor concentration, types and complexing agents as well as after-deposition heat treatment conditions. Addition of different concentration of ethylenediamine, ammonium sulfate, sodium citrate and hydrazine in the CBD reaction process was used to control the growth rate of ZnS thin films. As a consequence, the rapid thermal annealing was employed to enhance the film uniformity and thickness evenness, transmittance and the energy gap of ZnS samples. The obtained results would lead to an application of buffer layer for the CIGS thin film solar cells.
Some analytic tools including SEM, AFM, UV-VIS were used to analyze the CBD-derived nanosized ZnS buffer layers on CIGS thin film solar cells. The ZnS thin films prepared by the chemical bath deposition results in film thickness of 50 ~ 70 nm, high transmittance of 85 ~ 90% and the energy gap of 3.36 ~ 3.5 eV.
|
|---|
