Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide

Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide

碩士 === 大葉大學 === 電機工程學系 === 95 === The liquid-phase-deposition (LPD) oxide has been grown on GaN substrate under room temperature by using an aqueous solution of supersaturated hydrofluosilicic acid (H2SiF6) and an aqueous solution of boric acid (H3BO3). In this study, the as-grown LPD samples were a...

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Bibliographic Details
Main Authors:	Tung Ching Lin, 林東慶
Other Authors:	Jun-Dar Hwang
Format:	Others
Language:	zh-TW
Published:	2007
Online Access:	http://ndltd.ncl.edu.tw/handle/54884956603292809487

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