Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide

Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide

碩士 === 大葉大學 === 電機工程學系 === 95 === The liquid-phase-deposition (LPD) oxide has been grown on GaN substrate under room temperature by using an aqueous solution of supersaturated hydrofluosilicic acid (H2SiF6) and an aqueous solution of boric acid (H3BO3). In this study, the as-grown LPD samples were a...

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Main Authors: Tung Ching Lin, 林東慶
Other Authors: Jun-Dar Hwang
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/54884956603292809487
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spelling ndltd-TW-095DYU004420132016-05-25T04:14:20Z http://ndltd.ncl.edu.tw/handle/54884956603292809487 Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide 液相沉積二氧化矽氧化層在氮化鎵上的電特性探討 Tung Ching Lin 林東慶 碩士 大葉大學 電機工程學系 95 The liquid-phase-deposition (LPD) oxide has been grown on GaN substrate under room temperature by using an aqueous solution of supersaturated hydrofluosilicic acid (H2SiF6) and an aqueous solution of boric acid (H3BO3). In this study, the as-grown LPD samples were annealed at 700、 800 and 900℃ for 5 minutes under N2 or vacuum environments to improve their electrical properties. We found that the breakdown voltage was increased, fixed oxide charge and interface trap densities were reduced. Furthermore, anneal in vacuum would have more improvements than anneal in N2. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were investigated to determine electrical properties. The composition was examined by energy-dispersive x-ray (EDX) and X-ray photoelectron spectroscopy (XPS) and (SIMS). Jun-Dar Hwang 黃俊達 2007 學位論文 ; thesis 68 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 大葉大學 === 電機工程學系 === 95 === The liquid-phase-deposition (LPD) oxide has been grown on GaN substrate under room temperature by using an aqueous solution of supersaturated hydrofluosilicic acid (H2SiF6) and an aqueous solution of boric acid (H3BO3). In this study, the as-grown LPD samples were annealed at 700、 800 and 900℃ for 5 minutes under N2 or vacuum environments to improve their electrical properties. We found that the breakdown voltage was increased, fixed oxide charge and interface trap densities were reduced. Furthermore, anneal in vacuum would have more improvements than anneal in N2. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were investigated to determine electrical properties. The composition was examined by energy-dispersive x-ray (EDX) and X-ray photoelectron spectroscopy (XPS) and (SIMS).
author2 Jun-Dar Hwang
author_facet Jun-Dar Hwang
Tung Ching Lin
林東慶
author Tung Ching Lin
林東慶
spellingShingle Tung Ching Lin
林東慶
Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide
author_sort Tung Ching Lin
title Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide
title_short Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide
title_full Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide
title_fullStr Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide
title_full_unstemmed Electrical Properties of SiO2/n-GaN Metal–Oxide–Semiconductor with Liquid-Phase-Deposition Oxide
title_sort electrical properties of sio2/n-gan metal–oxide–semiconductor with liquid-phase-deposition oxide
publishDate 2007
url http://ndltd.ncl.edu.tw/handle/54884956603292809487
work_keys_str_mv AT tungchinglin electricalpropertiesofsio2nganmetaloxidesemiconductorwithliquidphasedepositionoxide
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AT líndōngqìng yèxiāngchénjīèryǎnghuàxìyǎnghuàcéngzàidànhuàjiāshàngdediàntèxìngtàntǎo
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