The Study of Ohmic Contact to GaN and Investigations on Metal-Oxide-Semiconductor Photodetectors
博士 === 大葉大學 === 電機工程學系 === 95 === ABSTRACT The main goal of this dissertation is to investigate the techniques of a low-resistance and high-transparency Ti/indium tin oxide and Ti ohmic contacts to n-type GaN by using plasma pre-treatment. Next, we also focused on the study of GaN metal-insulator-s...
Main Authors: | Gwo-Huei Yang, 楊國輝 |
---|---|
Other Authors: | jun-Dar Hwang |
Format: | Others |
Language: | en_US |
Published: |
2007
|
Online Access: | http://ndltd.ncl.edu.tw/handle/88067238591793784504 |
Similar Items
-
Study of Ohmic Contact of P-type GaN and Fabrication of GaN Photodetectors
by: Boon-Keat Toh, et al.
Published: (2005) -
Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN
by: Yao-Kuo Wang, et al.
Published: (2000) -
The Research of GaN Metal-Semiconductor-Metal Photodetector
by: Kuang-Li Lee, et al.
Published: (2002) -
Study of GaN Metal-Semiconductor-Metal Photodetectors
by: C.W.Wu, et al.
Published: (2008) -
The Study of the Metal/n-GaN Ohmic Contacts and the RIE Etching of GaN Materials
by: Yingming Lu, et al.
Published: (1994)