The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer

碩士 === 清雲科技大學 === 電機工程研究所 === 95 === In recently years, thin-film transistors (TFTs) including an active layer of amorphous silicon or polycrystalline silicon have been widely employed as the pixel-driving elements of a liquid crystal display (LCD). Particularly, the a-Si:H TFT is advantageous to th...

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Main Authors: Yuan-Yuan Lin, 林原園
Other Authors: Yu-Jane Mei
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/13618986215843592286
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spelling ndltd-TW-095CYU004420172015-10-13T16:41:21Z http://ndltd.ncl.edu.tw/handle/13618986215843592286 The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer 以鎂為歐姆接觸層製作非晶矽與微晶矽薄膜電晶體之研究 Yuan-Yuan Lin 林原園 碩士 清雲科技大學 電機工程研究所 95 In recently years, thin-film transistors (TFTs) including an active layer of amorphous silicon or polycrystalline silicon have been widely employed as the pixel-driving elements of a liquid crystal display (LCD). Particularly, the a-Si:H TFT is advantageous to the production of large screen displays and facilitates mass-production. In this thesis, we use semiconductor such as a-Si:H and uc-Si:H as the active layer and fabricate “Bottom Gate”structure uc-Si:H and a-Si:H thin film transistors with using Mg as the ohmic contact layer on glass. The HP4156C was used to investigate the electrical characteristic of TFTs. The surface morphology of uc-Si:H film after secco etching is observed by SEM, and the grain size is about 50nm. The Raman spectra also showed the microcrystal peak at 518cm . However,the electrical characteristics of uc-Si:H TFTs using Mg as the ohmic contact layer was demonstrated the on/off ratio close to 105 order , S.S about 1.34 V/dec, VTH about 1.7V, and mobility about 0.089cm2/V.s. Furthermore, the best electric characteristics of a-Si:H TFTs using Mg as the ohmic contact layer have showed the on/off ratio close to 106 order, S.S about 2.00 V/dec., VTH about 2.14 V, and mobility about 0.0529cm2/V.s. Yu-Jane Mei 梅玉貞 2007 學位論文 ; thesis 57 zh-TW
collection NDLTD
language zh-TW
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description 碩士 === 清雲科技大學 === 電機工程研究所 === 95 === In recently years, thin-film transistors (TFTs) including an active layer of amorphous silicon or polycrystalline silicon have been widely employed as the pixel-driving elements of a liquid crystal display (LCD). Particularly, the a-Si:H TFT is advantageous to the production of large screen displays and facilitates mass-production. In this thesis, we use semiconductor such as a-Si:H and uc-Si:H as the active layer and fabricate “Bottom Gate”structure uc-Si:H and a-Si:H thin film transistors with using Mg as the ohmic contact layer on glass. The HP4156C was used to investigate the electrical characteristic of TFTs. The surface morphology of uc-Si:H film after secco etching is observed by SEM, and the grain size is about 50nm. The Raman spectra also showed the microcrystal peak at 518cm . However,the electrical characteristics of uc-Si:H TFTs using Mg as the ohmic contact layer was demonstrated the on/off ratio close to 105 order , S.S about 1.34 V/dec, VTH about 1.7V, and mobility about 0.089cm2/V.s. Furthermore, the best electric characteristics of a-Si:H TFTs using Mg as the ohmic contact layer have showed the on/off ratio close to 106 order, S.S about 2.00 V/dec., VTH about 2.14 V, and mobility about 0.0529cm2/V.s.
author2 Yu-Jane Mei
author_facet Yu-Jane Mei
Yuan-Yuan Lin
林原園
author Yuan-Yuan Lin
林原園
spellingShingle Yuan-Yuan Lin
林原園
The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer
author_sort Yuan-Yuan Lin
title The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer
title_short The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer
title_full The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer
title_fullStr The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer
title_full_unstemmed The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer
title_sort study on fabrication of a-si:h and uc-si:h thin film transistors with using mg as ohmic contact layer
publishDate 2007
url http://ndltd.ncl.edu.tw/handle/13618986215843592286
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