The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer
碩士 === 清雲科技大學 === 電機工程研究所 === 95 === In recently years, thin-film transistors (TFTs) including an active layer of amorphous silicon or polycrystalline silicon have been widely employed as the pixel-driving elements of a liquid crystal display (LCD). Particularly, the a-Si:H TFT is advantageous to th...
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ndltd-TW-095CYU004420172015-10-13T16:41:21Z http://ndltd.ncl.edu.tw/handle/13618986215843592286 The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer 以鎂為歐姆接觸層製作非晶矽與微晶矽薄膜電晶體之研究 Yuan-Yuan Lin 林原園 碩士 清雲科技大學 電機工程研究所 95 In recently years, thin-film transistors (TFTs) including an active layer of amorphous silicon or polycrystalline silicon have been widely employed as the pixel-driving elements of a liquid crystal display (LCD). Particularly, the a-Si:H TFT is advantageous to the production of large screen displays and facilitates mass-production. In this thesis, we use semiconductor such as a-Si:H and uc-Si:H as the active layer and fabricate “Bottom Gate”structure uc-Si:H and a-Si:H thin film transistors with using Mg as the ohmic contact layer on glass. The HP4156C was used to investigate the electrical characteristic of TFTs. The surface morphology of uc-Si:H film after secco etching is observed by SEM, and the grain size is about 50nm. The Raman spectra also showed the microcrystal peak at 518cm . However,the electrical characteristics of uc-Si:H TFTs using Mg as the ohmic contact layer was demonstrated the on/off ratio close to 105 order , S.S about 1.34 V/dec, VTH about 1.7V, and mobility about 0.089cm2/V.s. Furthermore, the best electric characteristics of a-Si:H TFTs using Mg as the ohmic contact layer have showed the on/off ratio close to 106 order, S.S about 2.00 V/dec., VTH about 2.14 V, and mobility about 0.0529cm2/V.s. Yu-Jane Mei 梅玉貞 2007 學位論文 ; thesis 57 zh-TW |
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碩士 === 清雲科技大學 === 電機工程研究所 === 95 === In recently years, thin-film transistors (TFTs) including an active layer of amorphous silicon or polycrystalline silicon have been widely employed as the pixel-driving elements of a liquid crystal display (LCD). Particularly, the a-Si:H TFT is advantageous to the production of large screen displays and facilitates mass-production.
In this thesis, we use semiconductor such as a-Si:H and uc-Si:H as the active layer and fabricate “Bottom Gate”structure uc-Si:H and a-Si:H thin film transistors with using Mg as the ohmic contact layer on glass. The HP4156C was used to investigate the electrical characteristic of TFTs. The surface morphology of uc-Si:H film after secco etching is observed by SEM, and the grain size is about 50nm. The Raman spectra also showed the microcrystal peak at 518cm . However,the electrical characteristics of uc-Si:H TFTs using Mg as the ohmic contact layer was demonstrated the on/off ratio close to 105 order , S.S about 1.34 V/dec, VTH about 1.7V, and mobility about 0.089cm2/V.s. Furthermore, the best electric characteristics of a-Si:H TFTs using Mg as the ohmic contact layer have showed the on/off ratio close to 106 order, S.S about 2.00 V/dec., VTH about 2.14 V, and mobility about 0.0529cm2/V.s.
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Yu-Jane Mei |
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Yu-Jane Mei Yuan-Yuan Lin 林原園 |
author |
Yuan-Yuan Lin 林原園 |
spellingShingle |
Yuan-Yuan Lin 林原園 The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer |
author_sort |
Yuan-Yuan Lin |
title |
The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer |
title_short |
The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer |
title_full |
The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer |
title_fullStr |
The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer |
title_full_unstemmed |
The Study on Fabrication of a-Si:H and uc-Si:H Thin Film Transistors With using Mg as Ohmic Contact Layer |
title_sort |
study on fabrication of a-si:h and uc-si:h thin film transistors with using mg as ohmic contact layer |
publishDate |
2007 |
url |
http://ndltd.ncl.edu.tw/handle/13618986215843592286 |
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