A New Organic-Solvent-Free Process for High Stability Flexible/Organic Thin Film Transistors

• Main Authors: Horng-Jiunn Lin, 林宏駿
• Other Authors: Jeng-Hua Wei
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/74795500375621031624

碩士 === 清雲科技大學 === 電子工程研究所 === 94 === The primary goal of a thesis is to fabricate a new soluble, organic-solvent-free process for organic thin film transistors (OTFTs). In this device, the single-walled carbon nanotubes used as the channel layer were immersed in sodium dodecyl sulfate (SDS) undergoing the ultrasound wave and spread between source and drain electrode on top of silicon oxide layer. Subsequently, a top passivation insulator were formed by a special liquid-phase deposition silicon oxide (LPD-SiO2) process at 50℃ or less. In general, the semiconducting and passivation layer of OTFT are dissolved in organic solvents and these solvents will damage the underlying layers, including the gate insulator and substrate. Besides, the water and oxygen molecules in air usually oxidize the organic base material. It will cause undesirable leakage current and the performance of OTFT will degrade evidently. In this thesis, the semiconducting CNT network is formed by spun-on process and the insulating passivation layer is grown by immersing the wafers into the LPD-SiO2 solution. After these processes, there are no residual organic solvents in the underlying layers, including the gate insulator and CNT channel. Finally, after proper turning the anneal recipes, an air-stable OTFT is completed. At this low process temperature, the oxide-gated OTFT shows the medium on/off current ratio (~103).