On-Wafer Performance Analysis for ISFET Sensor and its Flow Injection-Type Analysis
碩士 === 中原大學 === 電子工程研究所 === 95 === The purpose of this research On-Wafer performance analysis for ISFET sensor. Include the variation of threshold voltage and Flow Injection Analysis for ISFET. Impact on sensitivity 、drift 、temperature coefficient(TCF) of the sensor of the flow rate of fluid. Used t...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74476064823535838143 |
| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 95 === The purpose of this research On-Wafer performance analysis for ISFET sensor. Include the variation of threshold voltage and Flow Injection Analysis for ISFET. Impact on sensitivity 、drift 、temperature coefficient(TCF) of the sensor of the flow rate of fluid. Used the HP-4155 Semiconductor Parameter Analyzer to gauge MOSFET threshold voltage. Design a digital circuit to Calibration inaccuracy of voltage level . Decreasing the inaccuracy of voltage level 97.3%. In order to reduce the power consumption of the ISFET Readout circuit. Propose a threshold voltage Extractor-type ISFET Readout Circuit .It’s power consumption only 280.05uW. Temperature compensation circuit used the subtraction circuit and VT extractor .The temperature coefficient of ISFET readout circuit with temperature compensation is 0.02mV/℃
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