Characterizations of Non-Overlapped Implantation (NOI) n-MOSFETs
博士 === 中原大學 === 電子工程研究所 === 95 === Non-Volatile Memories (NVMs) have be developed and manufactured over 2 decades. Recently it is becoming more and more important in the semiconductor industry due to the application of the data storage for portable and mobile devices such as mobile phone, smart card...
Main Authors: | Chien-Sheng Hsieh, 謝建生 |
---|---|
Other Authors: | Erik S. Jeng |
Format: | Others |
Language: | en_US |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/67139808406432132367 |
Similar Items
-
Study of Simulating the Speech Recognition System by Non-overlapped implantation (NOI) MOSFET synapse Model
by: Yi-Ling Wei, et al.
Published: (2016) -
Characterization of Erasing ChargeInjection in Non-overlappedImplantation MOSFETs
by: Wei-Jen Tung, et al.
Published: (2009) -
Simulation of Punch Through Effect in Non-overlapped Implantation nMOSFETs
by: Chih-Wei Yang, et al.
Published: (2009) -
Study of Charge Retention Reliability Model in Non-overlapped Implantation nMOSFETs
by: Chih-Hsiang Hsiao, et al.
Published: (2012) -
Study of Punch Through Mechanism in Single-sided Non-Overlapped Implantation nMOSFETs
by: Er-Heng Yuan, et al.
Published: (2013)