Characterizations of Non-Overlapped Implantation (NOI) n-MOSFETs

• Main Authors: Chien-Sheng Hsieh, 謝建生
• Other Authors: Erik S. Jeng
• Format: Others
• Language: en_US
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/67139808406432132367

博士 === 中原大學 === 電子工程研究所 === 95 === Non-Volatile Memories (NVMs) have be developed and manufactured over 2 decades. Recently it is becoming more and more important in the semiconductor industry due to the application of the data storage for portable and mobile devices such as mobile phone, smart card and digital cameras. This dissertation addresses a novel Non-Overlapped Implantation (NOI) n-MOSFET as a NVM device capable of storing two bits per transistor. Firstly the NOI n-MOSFET including the device fabrication, high field mechanism of NVM devices and operating methodology of NOI n-MOSFETs are introduced. Secondly the characteristics of NOI n-MOSFETs including the basic ID-VG curves, 2-bit operation, the performance of programming and erasing speed, the reliability measuring results including programming and reading disturbance, cycling and endurance, and data retention are investigated and studied. Thirdly due to the low programming speed of NOI devices shown in the previous, the methodology of programming performance improvement, which includes the programming operation, the process modifications, and the reliability related issues such as the endurance, retention and activation energy, are investigated. Finally the scalibility of NOI n-MOSFETs is discussed according to the simulation result.