The Fabrication and Characterization of IrxSi FUSI Metal Gate with HfAlON Insulator P-MOS Field-Effect Transistors
碩士 === 中華大學 === 電機工程學系碩士班 === 95 === To continue down-scaling CMOS technology, traditional insulator layer - SiO2 will face the physical limitation - large gate leakage current. In addition, traditional poly-Si gate encounters several inherent limitations, such as poly-Si depletion, boron penetratio...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59417807890415600820 |