A study of the novel non-volatile memory device
碩士 === 長庚大學 === 半導體產業研發碩士專班 === 96 === A novel non-volatile memory device is studied in this thesis. At first, the structure of novel non-volatile memory device will be introduced, and then the operation theorem. The novel non-volatile memory device is programmed by GIDL-like mechanism and erased by...
Main Authors: | Ming-Mao Huang, 黃明懋 |
---|---|
Other Authors: | Chao-Sung Lai |
Format: | Others |
Language: | en_US |
Published: |
2007
|
Online Access: | http://ndltd.ncl.edu.tw/handle/04355713541029010205 |
Similar Items
-
Study of Wearable Non-volatile Resistive Memory Devices
by: Ming-Sheng Yao, et al.
Published: (2016) -
Novel dielectrics for non-volatile memory devices
by: Godber, Geoffrey A.
Published: (1978) -
A Study on Novel Structure of Non-Volatile Memory Devices
by: Chiang, Tsung-Yu, et al.
Published: (2011) -
The Study of Novel Single Transistor Non-Volatile Memory Device
by: Zhen-Jia Fan, et al.
Published: (2004) -
Study of Nanoscale Strained CMOS Devices and Novel Non-volatile Memory Devices
by: Wei-Ching Wang, et al.
Published: (2006)