A study of the novel non-volatile memory device
碩士 === 長庚大學 === 半導體產業研發碩士專班 === 96 === A novel non-volatile memory device is studied in this thesis. At first, the structure of novel non-volatile memory device will be introduced, and then the operation theorem. The novel non-volatile memory device is programmed by GIDL-like mechanism and erased by...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04355713541029010205 |
| Summary: | 碩士 === 長庚大學 === 半導體產業研發碩士專班 === 96 === A novel non-volatile memory device is studied in this thesis. At first, the structure of novel non-volatile memory device will be introduced, and then the operation theorem. The novel non-volatile memory device is programmed by GIDL-like mechanism and erased by F-N tunneling. The way to read the novel non-volatile memory device is similar to read NROM. Besides, this structure will be applied in NAND array. Single cell with pass gate structure is a small string to simulate the NAND string. The operation of NAND array will be more understood by the characteristics of single cell with pass gate structure and the SPICE simulation. At last is the experiment of single cell with pass gate structure’s endurance and data retention.
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