The Optical and Electrical Characteristics of InGaN Multiple Coupled Quantum Well Blue LEDs
碩士 === 長庚大學 === 電子工程研究所 === 95 === Abstract In this study, we grow four InGaN/GaN multiple quantum well (MQW) LED structures by MOVPE on c-plane sapphire substrates. For investigating the coupled structure influence, we insert a short InxGa1-xN barrier in the center of the quantum well named as mult...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/00039714675870020485 |
| Summary: | 碩士 === 長庚大學 === 電子工程研究所 === 95 === Abstract
In this study, we grow four InGaN/GaN multiple quantum well (MQW) LED structures by MOVPE on c-plane sapphire substrates. For investigating the coupled structure influence, we insert a short InxGa1-xN barrier in the center of the quantum well named as multiple coupled quantum well (MCQW).
First the temperature dependences of photoluminescence ware performed to verify the sample’s emission peak position and the other characteristics. The results showed that with increasing indium composition in the InxGa1-xN barrier of the MCQW, the emission peak position was redshift and exhibited different behaviors of emission mechanisms in these samples. We also used X-ray diffraction (XRD) and reciprocal space map (RSM) to confirm the indium composition of the short InxGa1-xN barrier of the MCQW. From current dependences of electroluminescence (EL) measurements, we found out more about the emission mechanism of the samples. Finally, of the electrical-optical characteristics were study by the current-voltage measurement (I-V) and the light output power-current measurement (L-I).
|
|---|