The Large Signal Model of Enhancement–Mode pHEMT and Microwave Tripler Circuit DesignThe Large Signal Model of Enhancement–Mode pHEMT and Microwave Tripler Circuit Design
碩士 === 長庚大學 === 電子工程研究所 === 95 === InGaP/InGaAs pHEMT device is one of the most important device of Ⅲ-Ⅴsemiconductors in military and commercial communication applications at microwave and millimeter-wave frequencies. It is extremely important to model the characteristics of the transistors before y...
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| Format: | Others |
| Language: | zh-TW |
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95886604736216491955 |