design and fabrication of the RF inductor

• Main Authors: Tsung-Hsin Huang, 黃宗信
• Other Authors: C. P. Kuo
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/30285571884092040052

碩士 === 國立中正大學 === 機械工程所 === 95 === This paper presents a high-Q tunable inductor by employing the transformer-type inductor structure design and micromachining fabrication technology. Through tuning the phase, the Q value could reach more than 2000 at 4.8GHz. This value is obtained based on the measured data of our fabricated devices and ADS (Agilent Advance Design System) calculation. We select three different designs of fabricated devices for characterization, comparison, and discussion in this paper. The high Q tuning mechanism and its associated circuit for implementation is described. Also, the detailed fabrication process of inductors is included. Currently our fabricated transformer-type inductor is constructed on the silicon substrate with 2μm thick low stress nitride deposited as an insulting layer. 0.5μm thick aluminum coils is used, and the top main coils are elevated 0.5μm above the ground electrode connection. PECVD silicon nitride is used as the spacer material. Integration of the fabricated transformer-type inductor with related components on a circuit board is on going. Once we completely finish our microfabrication process later, better performance could be expected