The Effectof Biased N2 Plasma on Silicon Nitride Films
碩士 === 大同大學 === 光電工程研究所 === 94 === In this study, Self-biased nitrogen plasma treatment was used to improve the electrical characteristics of silicon nitride films, such as leakage current density and breakdown electrical field. The silicon nitride films were prepared by plasma enhanced chemical vap...
Main Authors: | Ming-Hsien Yang, 楊銘賢 |
---|---|
Other Authors: | none |
Format: | Others |
Language: | en_US |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/75449574824291577955 |
Similar Items
-
EffectofAntioxidantsonthecolor﹑nitriteresidueandnitrosaminescontentinthemyoglobinmodelsystem
by: Chen, Ji-Zhi, et al. -
Effectof-thiotriphosphatesubstitutionontheself-cleavagereactionofhepatitisdeltavirusgenomicribozyme
by: Zhang, De-Yuan, et al. -
Measurements of mechanical properties of silicon dioxide and silicon rich nitride thin film
by: Chang Yuan Ming, et al.
Published: (2004) -
The characteristics of Si rich silicon nitride/silicon crystal film in SONOS NVM device application
by: Hsu wen-ming, et al.
Published: (2005) -
Effectof1,3-β-glucanaseonexopolysaccharideproducedbysubmergedcultureofGanodermatsugae
by: Liang, Zhi-Qin, et al.