The Effectof Biased N2 Plasma on Silicon Nitride Films

• Main Authors: Ming-Hsien Yang, 楊銘賢
• Other Authors: none
• Format: Others
• Language: en_US
• Published: 2008
• Online Access: http://ndltd.ncl.edu.tw/handle/75449574824291577955

碩士 === 大同大學 === 光電工程研究所 === 94 === In this study, Self-biased nitrogen plasma treatment was used to improve the electrical characteristics of silicon nitride films, such as leakage current density and breakdown electrical field. The silicon nitride films were prepared by plasma enhanced chemical vapor deposition at low temperature (~150℃). The dc offset voltage measured at a blocking capacitor in the RF power matching network was employed as a parameter for N2 plasma treatment. When dc offset voltage was 75 V, N2 plasma treatment improved the electrical characteristics of silicon nitride films. The treatment of biased N2 plasma not only enhanced the effect of nitridation but also relieved the ion bombardment. It suggests that N atoms released from N2 plasma replace O atoms resided in the deposited films to form Si-N bonds.