| Summary: | 碩士 === 東海大學 === 物理學系 === 94 === In this thesis, combining vapor phase transport technology with metal-catalyzed the growth of GaN nanostructure onto silicon substrate is the main purpose.
In this study, 5nm-thick Au thin film used as catalyst for synthesizing nanowires was sputtered onto monocrystalline silicon(100). Solid source of gallium, NH3, N2, C2H2 gases were used as Ga, N, and C precursors respectively, and H2 used to carry O on N2 gas and solid source Ga. By making use of the 2-steps to grow GaN-GaN@CNT heterostructure nanowires. The structural characteristic of the material was examined with scanning transmission electron microscope, PL spectra and X-ray powder diffraction.
In addition, we attempt to synthesize GaN quantum dots by using vapor phase transport. We still sputter Au on silicon(100) as catalyst for synthesizing quantum dots. Solid source of gallium, NH3, N2 gases were used as Ga, N, and H2 used to carry O on N2 gas and solid source of gallium. The structural characteristic of the material was examined with scanning transmission electron microscope and photoluminescence spectra.
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