The fabrication and characteristics of SrBi4Ti4O15 ferroelectric thin film by RF sputtering method
碩士 === 南台科技大學 === 電子工程系 === 94 === In the developed non-volatile random access memory materials, the SrBi4Ti4O15 ceramics had attracted many attentions because of its good dielectric characteristics. In this study, SrBi4Ti4O15 + 4wt% Bi2O3 ceramics is used as the source material of sputtering method...
Main Authors: | Li-Ming Chuang, 莊力鳴 |
---|---|
Other Authors: | Chien-Min Cheng |
Format: | Others |
Language: | zh-TW |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/81601805114493891010 |
Similar Items
-
Upconversion luminescence, ferroelectrics and piezoelectrics of Er Doped SrBi4Ti4O15
by: Dengfeng Peng, et al.
Published: (2012-12-01) -
Structure and dielectric properties of Sm3+ modified Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics
by: Badavath Shobhan Babu, et al.
Published: (2020-09-01) -
The Study of SrBi4Ti4O15 Thin Film Prepared by Sol-Gel Method
by: Hung-Chuan,Hsu, et al.
Published: (2010) -
The preparation of SrBi2Ta2O9 thin film by RF. Magnetron sputtering
by: Sam Tiao, et al.
Published: (2005) -
The Study of Impurities-doped on Sintering Temperature and Dielectric Properties of SrBi4Ti4O15
by: Ming-An Feng, et al.
Published: (2004)