Analog CMOS integrated circuit implementation of the photonic lock-in amplifier
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 94 === In this thesis, we propose the analog CMOS integrated circuit implement of a Lock-in amplifier. This design is based on a two-stage operational amplifier (OPA). A dual-output OP amplifier, a four-quadrant analog multiplier, a square-root circuit, a modulus c...
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ndltd-TW-094NYPI51240032019-09-24T03:34:24Z http://ndltd.ncl.edu.tw/handle/4w3d2c Analog CMOS integrated circuit implementation of the photonic lock-in amplifier 光電鎖相放大器之類比互補式金氧半積體電路設計 Zheng-Shuo Tong 童政碩 碩士 國立虎尾科技大學 光電與材料科技研究所 94 In this thesis, we propose the analog CMOS integrated circuit implement of a Lock-in amplifier. This design is based on a two-stage operational amplifier (OPA). A dual-output OP amplifier, a four-quadrant analog multiplier, a square-root circuit, a modulus circuit, and a division circuit are all based on this OPA. The design parameters are based on the TSMC 0.35 μm process. The OPA has an open-loop gain of 80 dB and the multiplier has a linear output range of ± 0.4 V. The key technique applied in Lock-in amplifier is the Phase-Sensitive Detection (PSD), which pick the signal with the specific frequency and phase by multiply the input signal with a reference signal. The result signal is then filtered by a low pass filter to obtain a DC value. Finally, the output voltage value is normalized to overcome the light intensity variation problem. The test input signal voltage is about 1 μV~50 μV and the bandwidth is about 50 Hz~1 kHz. A photo detector is also fabricated on the identical chip .The total power consumption is about 66 mW. 2006 學位論文 ; thesis 72 zh-TW |
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碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 94 === In this thesis, we propose the analog CMOS integrated circuit
implement of a Lock-in amplifier. This design is based on a two-stage
operational amplifier (OPA). A dual-output OP amplifier, a four-quadrant
analog multiplier, a square-root circuit, a modulus circuit, and a division circuit are all based on this OPA. The design parameters are based on the TSMC 0.35 μm process. The OPA has an open-loop gain of 80 dB and the multiplier has a linear output range of ± 0.4 V. The key technique applied in Lock-in amplifier is the Phase-Sensitive Detection (PSD), which pick the signal with the specific frequency and phase by multiply the input signal with a reference signal. The result signal is then filtered by a low pass filter to obtain a DC value. Finally, the output voltage value is normalized to overcome the light intensity variation problem. The test input signal voltage is about 1 μV~50 μV and the bandwidth is about 50 Hz~1 kHz. A photo detector is also fabricated on the identical chip .The total power consumption is about 66 mW.
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author |
Zheng-Shuo Tong 童政碩 |
spellingShingle |
Zheng-Shuo Tong 童政碩 Analog CMOS integrated circuit implementation of the photonic lock-in amplifier |
author_facet |
Zheng-Shuo Tong 童政碩 |
author_sort |
Zheng-Shuo Tong |
title |
Analog CMOS integrated circuit implementation of the photonic lock-in amplifier |
title_short |
Analog CMOS integrated circuit implementation of the photonic lock-in amplifier |
title_full |
Analog CMOS integrated circuit implementation of the photonic lock-in amplifier |
title_fullStr |
Analog CMOS integrated circuit implementation of the photonic lock-in amplifier |
title_full_unstemmed |
Analog CMOS integrated circuit implementation of the photonic lock-in amplifier |
title_sort |
analog cmos integrated circuit implementation of the photonic lock-in amplifier |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/4w3d2c |
work_keys_str_mv |
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1719256841209249792 |