A Study of Device and Reliability Measurements in the 0.25μm Split Gate Flash Memory

• Main Authors: Yet-fun Chang, 張逸凡
• Other Authors: Shen-Li Chen
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/54339177142656867686

碩士 === 國立聯合大學 === 電子工程學系碩士班 === 94 === The needful characteristics of a flash memory are small volume, high speed and high capacity. In the future, how to get the good working efficiency in the high capacity is a very important topic. In this thesis, under varying the length between floating gate and drain, and the different oxygen concentration in substrate, the charge characteristic in the floating gate is investigated. And, the working efficiency of a split gate flash memory will be studied in this work. Meanwhile, in the thesis we propose the high efficiency combination system (HECS) model to enhance flash memory efficiency when it processes too much data quantity under high capacity. Finally, when we analyze the oxide layer structure, the charge distributes non-uniformly under the oxide layer, the interface trap density (Dit) will be produced a negative value by Terman method.