| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 93 === This thesis studies three topics：the simulation of p-n diode type light-detection circuit using current mirror, the implementation of transimpedance amplifier using 0.35μm CMOS process, and the implementation of photogate type integrated circuit using 0.35μm CMOS process.
First, the simulation of light-detection circuit of the diode type is described. The application of current mirror structure to detect photocurrent is reviewed. Simulation results for 0.35μm CMOS process are discussed.
In the second part, the transimpedance amplifier employing current minors is studied. It is implemented using TSMC 0.35μm CMOS process.
In the last part, the fabrication of optical receiving circuit of the photogate type is described. After the light is converted into the electric charge, it can store the charge in the potential well temporarily. And, it can transfer the electric charge to distinguish the signal from the background light .
In the topics mentioned above, they have the same feature in the use of material, the silicon. Using different designs, we have not only simulate these circuits, but also implement them using 0.35μm CMOS process.
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