The study of the film structure of Au(Be)/AlGaAs(100) wafer

• Main Authors: Kuan-liang Liu, 劉冠良
• Other Authors: Wei-chun Cheng
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/53xf5d

碩士 === 國立臺灣科技大學 === 機械工程系 === 94 === The object of this thesis was to study the metallization layers of AuBe alloy on P-type AlGaAs(100) wafers. The Au/AuBe/Au layers were deposited onto the AlGaAs wafers by a thermal evaporation method. After the evaporation process the AlGaAs wafers were annealed in either traditional tube furnace or rapid thermal annealing (RTA) furnace for the alloying processes. The XRD analysis in the Au/AuBe/Au layers on the AlGaAs wafers indicated that the metal layers are mixed with Au and Au3Be phases in the as-deposited condition. In the traditional annealing process at 520 oC and RTA processes at 450 oC and 500 oC find new compound which is BeAs and AuBe phase in high temperature. In the HRTEM analyse in the traditional annealing process at 520 oC and RTA 500 oC, it calculate AlGaAs lattic constant is 5.63 Å and BeAs compound lattic constant is 5.34 Å on (111) level direction, Compare with JCPDS card and verify the exactness of its experimental result is the same. In the TEM study we found that the microstructure mophologies in BeAs and AuBe structure diffraction imaging in different direction, Identification and AlGaAs sill have corresponding (200) direction relations. For I-V curve tests, the corresponding voltages at constant applied current for the wafers annealed in the rapid thermal processes at 400 oC、450 oC and 500 oC and are annealed in the traditional tube furnace at 485 oC and 520 oC slightly lower value that is from 1.33 V to 1.37 V, while the corresponding voltages are extremely high for the wafers annealed in RTA at 300 oC and 350 oC.