The design of low phase noise Hartley VCO and Dual-Band VCO
碩士 === 國立臺灣科技大學 === 電子工程系 === 94 === This thesis describes a new fully integrated, dual-band voltage controlled oscillator (DB-VCO) and a novel low noise differential CMOS Hartley voltage-controlled oscillator (H-VCO). The dual-band VCO is implemented in UMC 0.18μm CMOS technology with 1.8V supply v...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2983yc |
| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 94 === This thesis describes a new fully integrated, dual-band voltage controlled oscillator (DB-VCO) and a novel low noise differential CMOS Hartley voltage-controlled oscillator (H-VCO). The dual-band VCO is implemented in UMC 0.18μm CMOS technology with 1.8V supply voltage. The circuit allows the VCO to operate at two resonant frequencies with two LC tanks. This VCO is configured with 2.4GHz and 4.8 GHz frequency bands with differential outputs. The DB-VCO operates at 2.15GHz ~ 2.75GHz and 4.75GHz ~ 4.99GHz. And a novel low noise differential CMOS Hartley voltage-controlled oscillator (H-VCO) has been implemented with the TSMC 0.18 um 1P6M CMOS technology and adopts full PMOS to achieve a better phase noise performance. The H-VCO operates from 4.02GHz to 4.5GHz with 11.3 % tuning range. The measured phase noise at 1-MHz offset is about -119dBc/Hz at 4.02GHz and -122dBc/Hz at 4.5GHz.
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