Time-resolved optical characterization of laser annealing si film with crystallization processing and lateral growth rate
碩士 === 國立臺灣科技大學 === 電子工程系 === 94 === In this thesis,we measure melt duration of excimer laser annealing si film with HREC(Heat Retaining Layer Enhanced Crystallization) method by time-resolved optical reflection and transmission measurement system.Experiment results show that disc grain size enlarge...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/nxbec3 |
| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 94 === In this thesis,we measure melt duration of excimer laser annealing si film with HREC(Heat Retaining Layer Enhanced Crystallization) method by time-resolved optical reflection and transmission measurement system.Experiment results show that disc grain size enlarges to 8μm with α=12000cm-1 from 1μm with conventional method.It is because melt duration of si film elongates eighteen times from 50ns to 900ns.
Then we analyse crystallization characteristic of the grain by Raman spectrum.Experiment results show that crystallization characteristic is better as grain size with HREC method enlarges.
In addition,we success to obtain 10μm length lateral growth array by micro-lense array with HREC method and measure the duration of lateral growth is 800ns and the lateral growth rate is 6.2m/s by time-resolved optical measurement system.
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