Performance Improvement on the interface of Channel/Insulator for Organic TFT

• Main Authors: Cheng-I Lin, 林政儀
• Other Authors: Ching-Lin Fan
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/y54c2r

碩士 === 國立臺灣科技大學 === 電子工程系 === 94 === Organic thin-film transistors (TFTs) have been affected much attention due to their low temperature process, low cost, simple process, easy to manufacture, application to flexible electronics ex : electronics paper, electronics tag etc. In case of increase mobility maybe use in driving device in the future. In this paper, we use novel process NH3-plasma to improve mobility, the device is four layer bottom gate structure according to heavy doped Silicon wafer, dielectric layer(oxide), electrode(source/drain), active layer (pentacene). NH3-plasma treated oxide surface and then we successful improvement, NO/OFF current ratio =105, mobility(μ=2.4×10-3cm2/V-s). Use Atomic Force Microscope (AFM) and HP4156A to find grain size, grain boundary and electronic characteristic. Because of organic layer hydrophobia, all sample after wet etch put into oven 150ºC to roast. After NH3-plasma treatment the leakage current trend to large. And then discuss with all device characteristic and variation.