| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 94 === Low-k films with a dielectric constant of about 2.5 have been successfully synthesized using octafluoroluene(C7F8) and γ-glycidoxypropyl-trimethoxysilane(γ-GPS) as the precursors in a parallel plate PECVD system at 6 W and 100℃ .It is formed that when C7F8/γ-GPS feed molar ratio decreases from 16 to 5, the atomic ratio of F in the films decreases from 36.2% to 10.5%, and the dielectric constant increased from 2.5 to 4.26. To increase Si and O content in the films, oxygen from 0.2 to 0.6 sccm were introduced, by which the atomic ratio of Si and O increases from 1.1% to 33.4% and 18.1% to 58.6%, respectively. However C and F decreases sharply from 66.5% to 6.9% and 14.3% to 7.6%, respectively. After annealing in N2 atomsphere, the dielectric constant was decreased to 2.46 when 0.4 sccm oxygen was added during reactions. The sharp decrease of dielectric constant is most plausibly due to the formation of the film porosity.
|
|---|
