Study on the Integration of Film Bulk Acoustic Wave Filters with Low Noise Amplifiers

• Main Authors: Hon-Ren Lin, 林鴻仁
• Other Authors: 張培仁
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/7vd428

碩士 === 國立臺灣大學 === 應用力學研究所 === 94 === With the great demand of mobile communication systems and sensor network system, smaller, cheaper, and more efficient devices are required. However, passive elements, such as inductors, usually suffer from great loss in silicon substrate. A thin film bulk acoustic wave resonator (FBAR) is a solution for the problems because of high-Q, smaller volume, and integration compatibility. Meanwhile, it has been demonstrated that filter composed of FBARs is superior to the surface acoustic wave (SAW) filter and ceramic filter at even higher frequency. In this thesis, the integration of FBAR filter and low noise amplifier (LNA) is the goal. MEMS processes would be implanted on chip fabricated by UMC 1P6M CMOS process to integrate filter and amplifier functions. Besides co-simulation of FBAR filter and LNA on the same software platform, processes of FBAR or FBAR filter compatible with CMOS IC are demonstrated in this thesis. The processes are realized by surface micromachining, which is more feasible than bulk micromachining in integration. Based on these techniques, the design, simulation, and fabrication of FBAR filter and LNA can be done together, which contribute to FBAR technologies and SOC integration of RF components.