Processing and characterization of ambient light detector implemented by AlGaAs
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === The purpose of this study is using AlGaAs multi-layer structures to realize a photometric photodetector with a responsivity spectrum match to the CIE standard photopic luminous function. These structures used an AlxGa1-xAs PIN junction to absorb the visible ligh...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36868143274441430399 |
| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === The purpose of this study is using AlGaAs multi-layer structures to realize a photometric photodetector with a responsivity spectrum match to the CIE standard photopic luminous function. These structures used an AlxGa1-xAs PIN junction to absorb the visible light. The x value is from 0.53 to 0.61. A compositional linear-graded or step-graded layer of AlGaAs with low Al content was inserted into the PIN junction to tailor the spectrum in the long wavelength region to the luminous function. For the short wavelength region, we used an Al0.73Ga0.27As/GaAs composite layer as a filtering layer to reduce the response so as to fit the luminous function. The best device has a peak wavelength of 552nm, and the CIE f’1 error of the overall responsivity is 19.4%. We also made use of the color resist to adjust the responsivity spectrum of the photodetectors. The CIE f’1 error of the best resist-coated device is only 7.5% with a peak wavelength of 556nm.
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