Au Nanocrystal MOS Charge Storage Device By Using High-K Material As Tunneling Layer
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === The Au nanocrystal charge storage device by using High-K material as tunneling layer will be investigated in both C-V and Retention measurement to realize how the charge is programmed, erased and leaked. The tunneling layer material, such as HfO2 and HfSiO2, wil...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67629614972670025679 |