Quality Improvement of MOS Capacitors with Oxides Growth in Dry O2 by External Tensile-Temperature Stress Treatment
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === The metal-oxide-semiconductor (MOS) structure is the basis work for the complementary metal-oxide-semiconductor (CMOS) technology. Silicon oxide has been used as a gate dielectric of MOSFETs for more than forty years since MOSFET had been introduced due to its e...
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/70550672654607781759 |