| Summary: | 碩士 === 國立臺灣大學 === 物理研究所 === 94 === Scanning probe microscope has been extensively used to perform nanometer and atomic-scale modifications on a great variety of surface. The advantages of scanning probe lithography technique are its high resolution, excellent alignment accuracy, high reliability, and absence of radiation and charge damage, simpler and lower-cost in the substrate to be patterned. Nanolithography of chromium oxide nanowires and nanodots in chromium films deposited on silicon substrate are studied using atomic force microscopy (AFM) and electrostatic force microscopy (EFM). Factors that affect the height and full width at half-maximum (FWHM) of chromium oxide are bias voltage, scanning rate, writing time and relative humidity. The results indicated that as the writing time ,the bias voltage, and relative humidity increase, the nanostructure’s height and FWHM also increase. As the scanning rate increases, the height and FWHM of nanostructure decreases. Additionally, the nanodots were measured by EFM, and the experiment indicated that the charge of chromium oxide is negative. As the height of chromium oxide increases , negative charge of chromium oxide increases.
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