Transport in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots

碩士 === 國立臺灣大學 === 物理研究所 === 94 === The thesis describes the low temperature magnetotransport properties in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots. This thesis comprises the following two parts. 1. Localization, Landau quantization, and insulator-quantum Hall...

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Main Authors: Chao-Ping Huang, 黃兆平
Other Authors: 梁啟德
Format: Others
Language:en_US
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/29449273137822310020
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spelling ndltd-TW-094NTU051980162015-12-16T04:32:15Z http://ndltd.ncl.edu.tw/handle/29449273137822310020 Transport in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots 含砷化銦量子點的砷化鎵二維電子氣之傳輸 Chao-Ping Huang 黃兆平 碩士 國立臺灣大學 物理研究所 94 The thesis describes the low temperature magnetotransport properties in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots. This thesis comprises the following two parts. 1. Localization, Landau quantization, and insulator-quantum Hall transition at low magnetic fields We present a magnetotransport study of a two-dimensional electron system. Shubnikov-de Haas (SdH) oscillations are observed in the insulator, indicating that Landau quantization can modulate the density of states without causing the formation of the QH liquid. With increasing the perpendicular magnetic field, from our study the insulator-quantum Hall (I-QH) transition from the low-B insulator to a filling factor ν which is greater than or equal to 3 QH state does occur as Landau bands become well-separated while the Hall and longitudinal resistivities may be different at the transition point. We can estimate the quantum mobility according to the expression of SdH oscillations. At the transition point, the relation μB ~ 1 is still valid, which represents a necessity of well-separated Landau bands in the energy spectrum. 2. Temperature driven flow lines and “phase” transitions in a GaAs two-dimensional electron system containing InAs quantum dots We have constructed temperature driven flow lines from the longitudinal and transverse conductivities (σxx , σxy) in a gated two-dimensional GaAs electron gas containing InAs quantum dots, which allowed us to study the phase transition in our system. The flow lines could be realized theoretically from the effect of the renormalization-group functions. In the spin-degenerate regime, the separatrix σxy = me2/h ( m is an odd integer) separates a quantum Hall state from another. Moreover, the merging into these quantum Hall states with decreasing temperature appears to deviate from a semicircle relation. This could be due to the fact that the presence of inelastic scatterings (electron-phonon, electron-electron, etc.) is known to affect the localization effect. 梁啟德 2006 學位論文 ; thesis 53 en_US
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language en_US
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description 碩士 === 國立臺灣大學 === 物理研究所 === 94 === The thesis describes the low temperature magnetotransport properties in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots. This thesis comprises the following two parts. 1. Localization, Landau quantization, and insulator-quantum Hall transition at low magnetic fields We present a magnetotransport study of a two-dimensional electron system. Shubnikov-de Haas (SdH) oscillations are observed in the insulator, indicating that Landau quantization can modulate the density of states without causing the formation of the QH liquid. With increasing the perpendicular magnetic field, from our study the insulator-quantum Hall (I-QH) transition from the low-B insulator to a filling factor ν which is greater than or equal to 3 QH state does occur as Landau bands become well-separated while the Hall and longitudinal resistivities may be different at the transition point. We can estimate the quantum mobility according to the expression of SdH oscillations. At the transition point, the relation μB ~ 1 is still valid, which represents a necessity of well-separated Landau bands in the energy spectrum. 2. Temperature driven flow lines and “phase” transitions in a GaAs two-dimensional electron system containing InAs quantum dots We have constructed temperature driven flow lines from the longitudinal and transverse conductivities (σxx , σxy) in a gated two-dimensional GaAs electron gas containing InAs quantum dots, which allowed us to study the phase transition in our system. The flow lines could be realized theoretically from the effect of the renormalization-group functions. In the spin-degenerate regime, the separatrix σxy = me2/h ( m is an odd integer) separates a quantum Hall state from another. Moreover, the merging into these quantum Hall states with decreasing temperature appears to deviate from a semicircle relation. This could be due to the fact that the presence of inelastic scatterings (electron-phonon, electron-electron, etc.) is known to affect the localization effect.
author2 梁啟德
author_facet 梁啟德
Chao-Ping Huang
黃兆平
author Chao-Ping Huang
黃兆平
spellingShingle Chao-Ping Huang
黃兆平
Transport in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots
author_sort Chao-Ping Huang
title Transport in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots
title_short Transport in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots
title_full Transport in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots
title_fullStr Transport in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots
title_full_unstemmed Transport in a GaAs two-dimensional electron gas containing self-assembled InAs quantum dots
title_sort transport in a gaas two-dimensional electron gas containing self-assembled inas quantum dots
publishDate 2006
url http://ndltd.ncl.edu.tw/handle/29449273137822310020
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