Studies of the Electronic Properties of InAs/GaAs Nanostructure using k．p Method

• Main Authors: Chien-Ming Wu, 吳建民
• Other Authors: Hao-Hsiung Lin
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/97777321325128806536

碩士 === 國立臺灣大學 === 光電工程學研究所 === 94 === In this thesis, we use k．p theory to study the electronic structure of InAs/GaAs nanostructure, such as quantum well and quantum dot. We present a numerical calculation to calculate the single particle properties of conduction electrons and valence holes of the strained quantum wells (QWs) and quantum dots(QDs), calculated by using one-band effective mass and four-band Luttinger theories, respectively. In the calculation for strain in dots, we adapt the analytic solution of strain tensor in the Fourier representation. In the numerical implementation, we take the plane wave basis to expand the single-particle wave function, and diagonalize the strained Hamiltonian matrix employing the “ARPACK” algorithm. Finally, we can calculate the exciton binding energy from the wave function we obtained. Our program is applied to two case studies: (001)、 (111)-orientated InGaAs/GaAs QWs and InAs/GaAs self-assembled QDs with InGaAs or GaAs capping layer. In the (111)-orientated QW, the piezoelectric effect reduces the transition energy. We study the InAs QD with InGaAs capping layer and we can find that the transition energy of InAs dots is red shift.