| Summary: | 碩士 === 國立臺灣大學 === 化學工程學研究所 === 94 === Facet formation is a common phenomenon observed in melt or vapor growth. Because of that the segregation on facets occurs in a manner and the segregation coefficient can differ dramatically from that on a rough surface, the facet formation will effect the dopant concentration field in the grown crystal. Three-dimensional (3D) transient simulation of facet an its coupled heat flow and segregation in Bridgman growth of oxide crystals is presented. We used two kind of method to treat the interface which facet format on, and compared the difference between them. Furthermore, the simulation successfully reveals experimental observations, and the effects of crystal growth surroundings on the facet sizes are also investigated. Besides of the simulation of single kind facet on surface, the results of multi-facets are also presented. We also evaluate the dopant concentration field in the grown crystal when the facets are at different crystallographic plane.
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