Terahertz generation from InN
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 94 === We study terahertz emission from InxGa1-xN (x=1, 0.98, 0.92) surfaces excited by ultrafast laser pulses. The source of the THz radiation is believe to be either the time-dependent transport current produced by the optically generated carriers in the depletion f...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/36752615638402243918 |
| Summary: | 碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 94 === We study terahertz emission from InxGa1-xN (x=1, 0.98, 0.92) surfaces excited by ultrafast laser pulses. The source of the THz radiation is believe to be either the time-dependent transport current produced by the optically generated carriers in the depletion field and/or by hot-carrier diffusion (the photo-Dember effect). These mechanisms cannot be separated by our experiments. The THz radiation power for InxGa1-xN decreases as the Ga doping concentration increases. A possible explanation for the decrease in the radiation power is the electron mobility decreases with increasing Ga doping concentration.
|
|---|