| Summary: | 碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 94 === Blue-green photoluminescence (PL) of Mobil Composite Matter 41 (MCM-41 and MCM-41-ZnO) has been studied with laser annealing. The PL peak energy of MCM-41 was red-shifted and the PL intensity was extensively enhanced after the laser annealing in vacuum. In additions, the amount of red-shift increased and the temporal stability of PL intensity was strengthened with increasing time of laser annealing.
The extra peak near the UV is observed in native growth of MCM-41-ZnO and the peak energy was 3.26eV measured at room temperature. This result was similar to the ZnO (Eg~3.35eV) of wide bandgap material. The strong PL intensity of MCM-41-ZnO in UV light was over 3.2 times after laser annealing. It was concluded that MCM-41 has energy dependence when doping different ZnO nano structure. These phenomena show the promising potential of the MCM-41 for the application in the flat-panel-display materials.
We have studied of GaN nanowires using atomic force microscopy (AFM), photoluminescence (PL), Scanning electron microscopy (SEM), x-ray diffraction (XRD). It is found that coating different gold thickness on silicon wafer will influence the GaN nanowires structure and optical property. We point out the easily way to growth GaN nanowires by furnace and material property was corresponding to growth by MOCVD.
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