The Electrical Properties of Lead Zirconate Titanate Ferroelectric Thin Films for Dielectric Applications in Non-Volatile Memory Devices
博士 === 國立清華大學 === 電機工程學系 === 94 === Abstract Lead zirconate titanate Pb(Zr0.53,Ti0.47)O3 (PZT) is a promising ferroelectric material for VLSI circuit applications especially in ferroelectric random access memories (FRAM) and DRAM. Its large dielectric constant and rapid switching characteristics ca...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/f526uc |